Sinter Copper Electrode
PA-300A01-50NP Sinter Copper Electrode

An electrode sheet capable of achieving top-side interconnections for chips, compatible with copper wire ultrasonic bonding for wire diameters of 300-400 μm. Compared to aluminum wire, copper wire offers superior mechanical properties, electrical conductivity, and reliability, enabling higher current density and longer service life. This solution is suitable for SiC module and IGBT module packaging applications.

  • Thermal Conductivity (W/m⸱K) ≥250
  • Shearing Strength (MPa) ≥50
Product Features
  • Low-temperature sintering at 230℃
  • Electrode foils for interconnecting on the front side of the chip
  • Compatible with ultrasonic bonding of copper wires with a wire diameter of 300 - 400μm
  • Good mechanical properties, electrical conductivity and reliability.
  • Lead-free, halogen-free and flux-free
Function Parameter
Parameter Details Value
Thermal Conductivity (W/m⸱K) ≥250
Volumetric Resistivity (μΩ.cm) ≤6
Viscosity (Pa.s) NA
Mounting Technology w/o Adhesive Dots
Applicable Interface Au、Ag、Pd
Sintering Atmosphere Vacuum、N₂
Sintering Temperature (℃) 250
Sintering Pressure (MPa) 15
Sintering Time (min) 5
Shearing Strength (MPa) ≥50
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