An electrode sheet capable of achieving top-side interconnections for chips, compatible with copper wire ultrasonic bonding for wire diameters of 300-400 μm. Compared to aluminum wire, copper wire offers superior mechanical properties, electrical conductivity, and reliability, enabling higher current density and longer service life. This solution is suitable for SiC module and IGBT module packaging applications.
Parameter | Details Value |
Thermal Conductivity (W/m⸱K) | ≥250 |
Volumetric Resistivity (μΩ.cm) | ≤6 |
Viscosity (Pa.s) | NA |
Mounting Technology | w/o Adhesive Dots |
Applicable Interface | Au、Ag、Pd |
Sintering Atmosphere | Vacuum、N₂ |
Sintering Temperature (℃) | 250 |
Sintering Pressure (MPa) | 20 |
Sintering Time (min) | 5 |
Shearing Strength (MPa) | ≥50 |
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